Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100): Fid-Bau Portal

Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)

Akazawa, H.

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Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)

Akazawa, H.

Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)

Akazawa, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Optimum conditions for producing abrupt interfaces in vacuum-ultraviolet-excited Ge epitaxy on Si(100)

Contributors:

Akazawa, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 130-132 ; 292-297

Publication date:

1998-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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