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Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study
Shen, A. (author) / Ohno, H. (author) / Horikoshi, Y. (author) / Guo, S. P. (author) / Ohno, Y. (author) / Matsukura, F. (author)
APPLIED SURFACE SCIENCE ; 130-132 ; 382-386
1998-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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