A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Characterization of low temperature GaAs grown by molecular beam epitaxy
Characterization of low temperature GaAs grown by molecular beam epitaxy
Characterization of low temperature GaAs grown by molecular beam epitaxy
Lee, W. C. (author) / Hsu, T. M. (author) / Chyi, J.-I. (author) / Lee, G. S. (author) / Li, W.-H. (author) / Lee, K. C. (author)
APPLIED SURFACE SCIENCE ; 92 ; 66-69
1996-01-01
4 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Photoluminescence characterization of GaNAs/GaAs structures grown by molecular beam epitaxy
| British Library Online Contents | 2000
Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation
| British Library Online Contents | 1999
Applications of GaAs grown at a low temperature by molecular beam epitaxy
| British Library Online Contents | 1993
| British Library Online Contents | 2018
Investigation of whisker defects on molecular beam epitaxy grown GaAs layers
| British Library Online Contents | 1996