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Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Kern, R. S. (author) / Rowland, L. B. (author) / Tanaka, S. (author) / Davis, R. F. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 13 ; 1816-1822
1998-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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Solid solutions of AIN and SIC grown by plasma-assisted, gas-source molecular beam epitaxy
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