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Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
Kern, R. S. (Autor:in) / Rowland, L. B. (Autor:in) / Tanaka, S. (Autor:in) / Davis, R. F. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 13 ; 1816-1822
01.01.1998
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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