Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions: Fid-Bau Portal

Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions

Nowak, R. / Morgiel, J. / Yoshida, F.

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Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions

Nowak, R. / Morgiel, J. / Yoshida, F.

Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions

Nowak, R. / Morgiel, J. / Yoshida, F.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions

Contributors:

Nowak, R. (author) / Morgiel, J. (author) / Yoshida, F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 253 ; 328-336

Publication date:

1998-01-01

Size:

9 pages

ISSN:

0921-5093

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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