A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy: Fid-Bau Portal

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Kaiser, U. / Newcomb, S. B. / Stobbs, W. M. / Adamik, M. / Fissel, A. / Richter, W.

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A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Kaiser, U. / Newcomb, S. B. / Stobbs, W. M. / Adamik, M. / Fissel, A. / Richter, W.

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Kaiser, U. / Newcomb, S. B. / Stobbs, W. M. / Adamik, M. / Fissel, A. / Richter, W.

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Document information

Title:

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

Contributors:

Kaiser, U. (author) / Newcomb, S. B. (author) / Stobbs, W. M. (author) / Adamik, M. (author) / Fissel, A. (author) / Richter, W. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 13 ; 3571-3579

Publication date:

1998-01-01

Size:

9 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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