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    Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

    New search for: Okamoto, N.
    New search for: Tanaka, H.

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    Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

    New search for: Okamoto, N.
    New search for: Tanaka, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

    New search for: Okamoto, N.
    New search for: Tanaka, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation

    Contributors:

    Okamoto, N. (author) / Tanaka, H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 2 ; 13-18

    Publication date:

    1999-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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