A platform for research: civil engineering, architecture and urbanism
The dependence of the optical properties on the Ti doping concentration in GaAs epilayers
The dependence of the optical properties on the Ti doping concentration in GaAs epilayers
The dependence of the optical properties on the Ti doping concentration in GaAs epilayers
Wui, Y.H. (author) / Kang, T.W. (author) / Kim, T.W. (author)
APPLIED SURFACE SCIENCE ; 148 ; 111-115
1999-01-01
5 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
The dependence of the optical properties on the ^5^7Fe doping concentration in GaAs epilayers
British Library Online Contents | 1999
|Optical study of BxGa1−xAs/GaAs epilayers
British Library Online Contents | 2006
|Nanoindentation Studies Of GaAs/InP Epilayers
British Library Conference Proceedings | 2000
|Nitrogen Delta Doping in 4H-SiC Epilayers
British Library Online Contents | 2003
|Nanoindentation studies of (111) GaAs/InP epilayers
British Library Online Contents | 2001
|