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Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Brandt, O. / Mullhauser, J.R. / Trampert, A. / Ploog, K.H.

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Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Brandt, O. / Mullhauser, J.R. / Trampert, A. / Ploog, K.H.

Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Brandt, O. / Mullhauser, J.R. / Trampert, A. / Ploog, K.H.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Properties of cubic (In,Ga)N grown by molecular beam epitaxy

Contributors:

Brandt, O. (author) / Mullhauser, J.R. (author) / Trampert, A. (author) / Ploog, K.H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 73 - 79

Publication date:

1999-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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