Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) Substrates: Fid-Bau Portal

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) Substrates

Godlewski, M. / Ivanov, V. Y. / Bergman, J. P. / Monemar, B. / Barski, A. / Langer, R.

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Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) Substrates

Godlewski, M. / Ivanov, V. Y. / Bergman, J. P. / Monemar, B. / Barski, A. / Langer, R.

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) Substrates

Godlewski, M. / Ivanov, V. Y. / Bergman, J. P. / Monemar, B. / Barski, A. / Langer, R.

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Document information

Title:

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon (100) Substrates

Contributors:

Godlewski, M. (author) / Ivanov, V. Y. (author) / Bergman, J. P. (author) / Monemar, B. (author) / Barski, A. (author) / Langer, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 1343-1346

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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