Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy: Fid-Bau Portal

Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Bertram, F. / Riemann, T. / Christen, J. / Kaschner, A. / Hoffmann, A. / Hiramatsu, K. / Shibata, T. / Sawaki, N.

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Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Bertram, F. / Riemann, T. / Christen, J. / Kaschner, A. / Hoffmann, A. / Hiramatsu, K. / Shibata, T. / Sawaki, N.

Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Bertram, F. / Riemann, T. / Christen, J. / Kaschner, A. / Hoffmann, A. / Hiramatsu, K. / Shibata, T. / Sawaki, N.

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Document information

Title:

Epitaxial lateral overgrowth of GaN structures: spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Contributors:

Bertram, F. (author) / Riemann, T. (author) / Christen, J. (author) / Kaschner, A. (author) / Hoffmann, A. (author) / Hiramatsu, K. (author) / Shibata, T. (author) / Sawaki, N. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 117 - 121

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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