Annealing behavior and lattice site location of Hf implanted GaN: Fid-Bau Portal

Annealing behavior and lattice site location of Hf implanted GaN

Alves, E. / da Silva, M.F. / Marques, J.G. / Soares, J.C. / Freitag, K.

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Annealing behavior and lattice site location of Hf implanted GaN

Alves, E. / da Silva, M.F. / Marques, J.G. / Soares, J.C. / Freitag, K.

Annealing behavior and lattice site location of Hf implanted GaN

Alves, E. / da Silva, M.F. / Marques, J.G. / Soares, J.C. / Freitag, K.

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Check availability in my library

Order at Subito €

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Document information

Title:

Annealing behavior and lattice site location of Hf implanted GaN

Contributors:

Alves, E. (author) / da Silva, M.F. (author) / Marques, J.G. (author) / Soares, J.C. (author) / Freitag, K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 207 - 210

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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