Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy: Fid-Bau Portal

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

Krtschil, A. / Lisker, M. / Witte, H. / Christen, J. / Birkle, U. / Einfeldt, S. / Hommel, D.

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Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

Krtschil, A. / Lisker, M. / Witte, H. / Christen, J. / Birkle, U. / Einfeldt, S. / Hommel, D.

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

Krtschil, A. / Lisker, M. / Witte, H. / Christen, J. / Birkle, U. / Einfeldt, S. / Hommel, D.

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Title:

Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy

Contributors:

Krtschil, A. (author) / Lisker, M. (author) / Witte, H. (author) / Christen, J. (author) / Birkle, U. (author) / Einfeldt, S. (author) / Hommel, D. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 226 - 229

Publication date:

1999-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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