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    Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

    New search for: Im, J.S.
    New search for: Kollmer, H.
    New search for: Off, J.
    New search for: Scholz, F.
    New search for: Hangleiter, A.

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    Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

    New search for: Im, J.S.
    New search for: Kollmer, H.
    New search for: Off, J.
    New search for: Scholz, F.
    New search for: Hangleiter, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

    New search for: Im, J.S.
    New search for: Kollmer, H.
    New search for: Off, J.
    New search for: Scholz, F.
    New search for: Hangleiter, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

    Contributors:

    Im, J.S. (author) / Kollmer, H. (author) / Off, J. (author) / Scholz, F. (author) / Hangleiter, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 315 - 318

    Publication date:

    1999-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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