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Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
Im, J.S. (author) / Kollmer, H. (author) / Off, J. (author) / Scholz, F. (author) / Hangleiter, A. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 315 - 318
1999-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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