A platform for research: civil engineering, architecture and urbanism
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
Nakamura, S. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 2716-2731
1999-01-01
16 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
British Library Online Contents | 1999
|British Library Online Contents | 1998
|Electroluminescence from Implanted and Epitaxially Grown pn-Diodes
British Library Online Contents | 2000
|GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy
British Library Online Contents | 2004
|Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes
British Library Online Contents | 2008
|