GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy: Fid-Bau Portal

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J. / Martin, D. / Buhlmann, H. J. / Gradecak, S. / Ilegems, M.

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GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J. / Martin, D. / Buhlmann, H. J. / Gradecak, S. / Ilegems, M.

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J. / Martin, D. / Buhlmann, H. J. / Gradecak, S. / Ilegems, M.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Contributors:

Napierala, J. (author) / Martin, D. (author) / Buhlmann, H. J. (author) / Gradecak, S. (author) / Ilegems, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1581-1584

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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