Carbon-vacancy related defects in 4H- and 6H-SiC: Fid-Bau Portal

Carbon-vacancy related defects in 4H- and 6H-SiC

Son, N.T. / Chen, W.M. / Lindstrom, J.L. / Monemar, B. / Janzen, E.

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Carbon-vacancy related defects in 4H- and 6H-SiC

Son, N.T. / Chen, W.M. / Lindstrom, J.L. / Monemar, B. / Janzen, E.

Carbon-vacancy related defects in 4H- and 6H-SiC

Son, N.T. / Chen, W.M. / Lindstrom, J.L. / Monemar, B. / Janzen, E.

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Check availability in my library

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Document information

Title:

Carbon-vacancy related defects in 4H- and 6H-SiC

Contributors:

Son, N.T. (author) / Chen, W.M. (author) / Lindstrom, J.L. (author) / Monemar, B. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 202 - 206

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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