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Numerical simulation of implanted top-gate 6H-SiC JFET characteristics
Numerical simulation of implanted top-gate 6H-SiC JFET characteristics
Numerical simulation of implanted top-gate 6H-SiC JFET characteristics
Lades, M. (author) / Berz, D. (author) / Schmid, U. (author) / Sheppard, S.T. (author) / Kaminski, N. (author) / Wondrak, W. (author) / Wachutka, G. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 415 - 418
1999-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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