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    V-shaped defects in InGaN/GaN multiquantum wells

    New search for: Mahanty, S.
    New search for: Hao, M.
    New search for: Sugahara, T.
    New search for: Fareed, R.S.Q.
    New search for: Morishima, Y.
    New search for: Naoi, Y.
    New search for: Wang, T.
    New search for: Sakai, S.

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    V-shaped defects in InGaN/GaN multiquantum wells

    New search for: Mahanty, S.
    New search for: Hao, M.
    New search for: Sugahara, T.
    New search for: Fareed, R.S.Q.
    New search for: Morishima, Y.
    New search for: Naoi, Y.
    New search for: Wang, T.
    New search for: Sakai, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    V-shaped defects in InGaN/GaN multiquantum wells

    New search for: Mahanty, S.
    New search for: Hao, M.
    New search for: Sugahara, T.
    New search for: Fareed, R.S.Q.
    New search for: Morishima, Y.
    New search for: Naoi, Y.
    New search for: Wang, T.
    New search for: Sakai, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    V-shaped defects in InGaN/GaN multiquantum wells

    Contributors:

    Mahanty, S. (author) / Hao, M. (author) / Sugahara, T. (author) / Fareed, R.S.Q. (author) / Morishima, Y. (author) / Naoi, Y. (author) / Wang, T. (author) / Sakai, S. (author)

    Published in:

    MATERIALS LETTERS ; 41 ; 67-71

    Publication date:

    1999-01-01

    Size:

    5 pages

    ISSN:

    0167-577X

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105 / 530

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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