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Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes
Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes
Dependence of thermal annealing on the density distribution of interface states in Ti/n-GaAs(Te) Schottky diodes
Ayyildiz, E. (author) / Bati, B. (author) / Temirci, C. (author) / Turut, A. (author)
APPLIED SURFACE SCIENCE ; 152 ; 57-62
1999-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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