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    Calculation of hopping-conduction energy of holes in SiO"2 based on molecular orbital theory

    New search for: Takemura, Y.
    New search for: Ushio, J.
    New search for: Maruizumi, T.
    New search for: Kubota, K.
    New search for: Miyao, M.

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    Calculation of hopping-conduction energy of holes in SiO"2 based on molecular orbital theory

    New search for: Takemura, Y.
    New search for: Ushio, J.
    New search for: Maruizumi, T.
    New search for: Kubota, K.
    New search for: Miyao, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Calculation of hopping-conduction energy of holes in SiO"2 based on molecular orbital theory

    New search for: Takemura, Y.
    New search for: Ushio, J.
    New search for: Maruizumi, T.
    New search for: Kubota, K.
    New search for: Miyao, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Calculation of hopping-conduction energy of holes in SiO"2 based on molecular orbital theory

    Contributors:

    Takemura, Y. (author) / Ushio, J. (author) / Maruizumi, T. (author) / Kubota, K. (author) / Miyao, M. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 2 ; 233-238

    Publication date:

    1999-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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