A platform for research: civil engineering, architecture and urbanism
Hydrogen and doping issues in wide band gap semiconductors
Hydrogen and doping issues in wide band gap semiconductors
Hydrogen and doping issues in wide band gap semiconductors
Chevallier, J. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 62 - 68
2000-01-01
7 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2007
Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors
British Library Online Contents | 2010
|Effects of Ionicity on Defect Physics of Wide-Band-Gap Semiconductors
British Library Online Contents | 2004
|Numerical study of Bloch electron dynamics in wide band-gap semiconductors
British Library Online Contents | 2001
|Possibility of Power Electronics Paradigm Shift with Wide Band Gap Semiconductors
British Library Online Contents | 2004
|