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Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition
Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition
Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organic chemical vapor deposition
Williams, M. D. (author) / Greene, A. L. (author) / Daniels-Race, T. (author) / Lum, R. M. (author)
APPLIED SURFACE SCIENCE ; 157 ; 123-128
2000-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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