Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy: Fid-Bau Portal

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. / Malm, H. / Andersson, J. Y. / Holtz, P. O.

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Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. / Malm, H. / Andersson, J. Y. / Holtz, P. O.

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Hoglund, L. / Petrini, E. / Asplund, C. / Malm, H. / Andersson, J. Y. / Holtz, P. O.

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Check availability in my library

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Document information

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Document information

Title:

Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy

Contributors:

Hoglund, L. (author) / Petrini, E. (author) / Asplund, C. (author) / Malm, H. (author) / Andersson, J. Y. (author) / Holtz, P. O. (author)

Published in:

APPLIED SURFACE SCIENCE ; 252 ; 5525-5529

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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