Study of As precipitates in LEC SI-GaAs wafer by Raman probe: Fid-Bau Portal

Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Zhang, F. / Tu, H. / Wang, Y. / Qian, J. / Wang, H. / Wang, J. / Song, P.

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Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Zhang, F. / Tu, H. / Wang, Y. / Qian, J. / Wang, H. / Wang, J. / Song, P.

Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Zhang, F. / Tu, H. / Wang, Y. / Qian, J. / Wang, H. / Wang, J. / Song, P.

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Check availability in my library

Order at Subito €

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Document information

Title:

Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Contributors:

Zhang, F. (author) / Tu, H. (author) / Wang, Y. (author) / Qian, J. (author) / Wang, H. (author) / Wang, J. (author) / Song, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 75 ; 139 - 142

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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