A platform for research: civil engineering, architecture and urbanism
Ion beam synthesis of GaN precipitates in GaAs
Ion beam synthesis of GaN precipitates in GaAs
Ion beam synthesis of GaN precipitates in GaAs
Amine, S. (author) / Ben Assayag, G. (author) / Bonafos, C. (author) / de Mauduit, B. (author) / Hidriss, H. (author) / Claverie, A. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 93 ; 10 - 14
2002-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of As precipitates in LEC SI-GaAs wafer by Raman probe
British Library Online Contents | 2000
|Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
British Library Online Contents | 1993
|Fe–Ga–As precipitates and their magnetic domain structures in high-dose iron implanted GaAs
British Library Online Contents | 2011
|Precipitates in Antimony implanted Silicon
British Library Online Contents | 1995
|Electron-Beam-Pumped GaAs Laser
NTIS | 1964
|