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    Anomalously High Density of Interface States Near the Conduction Band in SiO~2/4H-SiC MOS Devices

    New search for: Das, M. K.
    New search for: Um, B. S.
    New search for: Cooper, J. A.

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    Anomalously High Density of Interface States Near the Conduction Band in SiO~2/4H-SiC MOS Devices

    New search for: Das, M. K.
    New search for: Um, B. S.
    New search for: Cooper, J. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Anomalously High Density of Interface States Near the Conduction Band in SiO~2/4H-SiC MOS Devices

    New search for: Das, M. K.
    New search for: Um, B. S.
    New search for: Cooper, J. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Anomalously High Density of Interface States Near the Conduction Band in SiO~2/4H-SiC MOS Devices

    Contributors:

    Das, M. K. (author) / Um, B. S. (author) / Cooper, J. A. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 338/342 ; 1069-1072

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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