Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques: Fid-Bau Portal

Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques

Sudre, C. / Mooney, M. / Leveugle, C. / O'Brien, J. / Lane, W. A.

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Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques

Sudre, C. / Mooney, M. / Leveugle, C. / O'Brien, J. / Lane, W. A.

Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques

Sudre, C. / Mooney, M. / Leveugle, C. / O'Brien, J. / Lane, W. A.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques

Contributors:

Sudre, C. (author) / Mooney, M. (author) / Leveugle, C. (author) / O'Brien, J. (author) / Lane, W. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1191-1194

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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