Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes: Fid-Bau Portal

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Morrison, D. J. / Pidduck, A. J. / Moore, V. / Wilding, P. J. / Hilton, K. P. / Uren, M. J. / Johnson, C. M.

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Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Morrison, D. J. / Pidduck, A. J. / Moore, V. / Wilding, P. J. / Hilton, K. P. / Uren, M. J. / Johnson, C. M.

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Morrison, D. J. / Pidduck, A. J. / Moore, V. / Wilding, P. J. / Hilton, K. P. / Uren, M. J. / Johnson, C. M.

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Title:

Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes

Contributors:

Morrison, D. J. (author) / Pidduck, A. J. (author) / Moore, V. (author) / Wilding, P. J. (author) / Hilton, K. P. (author) / Uren, M. J. (author) / Johnson, C. M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1199-1202

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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