Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant: Fid-Bau Portal

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

Khemka, V. / Chatty, K. / Chow, T. P. / Gutmann, R. J.

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Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

Khemka, V. / Chatty, K. / Chow, T. P. / Gutmann, R. J.

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

Khemka, V. / Chatty, K. / Chow, T. P. / Gutmann, R. J.

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Check availability in my library

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Document information

Title:

Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant

Contributors:

Khemka, V. (author) / Chatty, K. (author) / Chow, T. P. (author) / Gutmann, R. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1211-1214

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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