A platform for research: civil engineering, architecture and urbanism
Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Zhang, Q. (author) / Madangarli, V. (author) / Tarplee, M. (author) / Sudarshan, T. S. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1223-1226
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Tungsten, nickel, and molybdenum Schottky diodes with different edge termination
British Library Online Contents | 2001
|Development of 600 V/ 8 A SiC Schottky Diodes with Epitaxial Edge Termination
British Library Online Contents | 2002
|Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
British Library Online Contents | 2004
|High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
British Library Online Contents | 2007
|Comparison between Schottky Diodes with Oxide Ramp Termination on Silicon Carbide and Diamond
British Library Online Contents | 2007
|