Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers: Fid-Bau Portal

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Chatty, K. / Khemka, V. / Chow, T. P. / Gutmann, R. J.

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Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Chatty, K. / Khemka, V. / Chow, T. P. / Gutmann, R. J.

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Chatty, K. / Khemka, V. / Chow, T. P. / Gutmann, R. J.

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Check availability in my library

Order at Subito €

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Document information

Title:

Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers

Contributors:

Chatty, K. (author) / Khemka, V. (author) / Chow, T. P. (author) / Gutmann, R. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1331-1334

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Fedison, J. B. / Li, Z. / Khemka, V. et al. | British Library Online Contents | 2000

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