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Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers
Chatty, K. (Autor:in) / Khemka, V. (Autor:in) / Chow, T. P. (Autor:in) / Gutmann, R. J. (Autor:in)
MATERIALS SCIENCE FORUM ; 338/342 ; 1331-1334
01.01.2000
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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