Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics: Fid-Bau Portal

Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Miyamoto, N. / Saitoh, A. / Kimoto, T. / Matsunami, H. / Hishida, Y. / Watanabe, M.

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Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Miyamoto, N. / Saitoh, A. / Kimoto, T. / Matsunami, H. / Hishida, Y. / Watanabe, M.

Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Miyamoto, N. / Saitoh, A. / Kimoto, T. / Matsunami, H. / Hishida, Y. / Watanabe, M.

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Title:

Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Contributors:

Miyamoto, N. (author) / Saitoh, A. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Hishida, Y. (author) / Watanabe, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1347-1350

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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