A platform for research: civil engineering, architecture and urbanism
Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO~2 at Low Growth Temperature
Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO~2 at Low Growth Temperature
Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO~2 at Low Growth Temperature
Kang, S. (author) / Doolittle, W. A. (author) / Stock, S. R. (author) / Brown, A. l. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1499-1502
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of epitaxial GaN on LiGaO~2 substrates via a reaction with ammonia
British Library Online Contents | 2001
|Synthesis of LiAlO~2 and LiGaO~2 by Ion Exchange Reaction
British Library Online Contents | 1997
|Growth of high-quality AlGaN epitaxial films on Si substrates
British Library Online Contents | 2017
|Epitaxial growth to non-planar substrates by step-flow
British Library Online Contents | 1999
|GaN grown on Si(111) with step-graded AlGaN intermediate layers
British Library Online Contents | 2010
|