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GaN grown on Si(111) with step-graded AlGaN intermediate layers

Huang, C. C. / Chang, S. J. / Chuang, R. W. / Lin, J. C. / Cheng, Y. C. / Lin, W. J.

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GaN grown on Si(111) with step-graded AlGaN intermediate layers

Huang, C. C. / Chang, S. J. / Chuang, R. W. / Lin, J. C. / Cheng, Y. C. / Lin, W. J.

GaN grown on Si(111) with step-graded AlGaN intermediate layers

Huang, C. C. / Chang, S. J. / Chuang, R. W. / Lin, J. C. / Cheng, Y. C. / Lin, W. J.

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Check availability in my library

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Document information

Title:

GaN grown on Si(111) with step-graded AlGaN intermediate layers

Contributors:

Huang, C. C. (author) / Chang, S. J. (author) / Chuang, R. W. (author) / Lin, J. C. (author) / Cheng, Y. C. (author) / Lin, W. J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 256 ; 6367-6370

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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