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    Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

    New search for: Prakash, S.
    New search for: Tan, L. S.
    New search for: Ng, K. M.
    New search for: Raman, A.
    New search for: Chua, S. J.
    New search for: Wee, A. T. S.
    New search for: Lim, S. I.

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    Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

    New search for: Prakash, S.
    New search for: Tan, L. S.
    New search for: Ng, K. M.
    New search for: Raman, A.
    New search for: Chua, S. J.
    New search for: Wee, A. T. S.
    New search for: Lim, S. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

    New search for: Prakash, S.
    New search for: Tan, L. S.
    New search for: Ng, K. M.
    New search for: Raman, A.
    New search for: Chua, S. J.
    New search for: Wee, A. T. S.
    New search for: Lim, S. I.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Ohmic Contact Formation on Silicon-Doped Gallium Nitride Epilayers by Low Temperature Annealing

    Contributors:

    Prakash, S. (author) / Tan, L. S. (author) / Ng, K. M. (author) / Raman, A. (author) / Chua, S. J. (author) / Wee, A. T. S. (author) / Lim, S. I. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 338/342 ; 1619-1622

    Publication date:

    2000-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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