Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam Epitaxy: Fid-Bau Portal

Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S. / Hatayama, T. / Kimoto, T. / Fuyuki, T. / Matsunami, H.

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Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S. / Hatayama, T. / Kimoto, T. / Fuyuki, T. / Matsunami, H.

Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam Epitaxy

Nakamura, S. / Hatayama, T. / Kimoto, T. / Fuyuki, T. / Matsunami, H.

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Check availability in my library

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Document information

Title:

Growth of SiC on 6H-SiC {01&unknown;14} Substrates by Gas Source Molecular Beam Epitaxy

Contributors:

Nakamura, S. (author) / Hatayama, T. (author) / Kimoto, T. (author) / Fuyuki, T. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 201-204

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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