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Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion

Sakata, K. / Sato, T. / Nakamura, K. / Osamura, A. / Tachibana, A.

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Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion

Sakata, K. / Sato, T. / Nakamura, K. / Osamura, A. / Tachibana, A.

Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion

Sakata, K. / Sato, T. / Nakamura, K. / Osamura, A. / Tachibana, A.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion

Contributors:

Sakata, K. (author) / Sato, T. (author) / Nakamura, K. (author) / Osamura, A. (author) / Tachibana, A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 392-397

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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