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    Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

    New search for: Zhaochun, Z.
    New search for: Xiaoyan, Q.
    New search for: Deliang, C.
    New search for: Xianggui, K.
    New search for: Baibiao, H.
    New search for: Minhua, J.

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    Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

    New search for: Zhaochun, Z.
    New search for: Xiaoyan, Q.
    New search for: Deliang, C.
    New search for: Xianggui, K.
    New search for: Baibiao, H.
    New search for: Minhua, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

    New search for: Zhaochun, Z.
    New search for: Xiaoyan, Q.
    New search for: Deliang, C.
    New search for: Xianggui, K.
    New search for: Baibiao, H.
    New search for: Minhua, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

    Contributors:

    Zhaochun, Z. (author) / Xiaoyan, Q. (author) / Deliang, C. (author) / Xianggui, K. (author) / Baibiao, H. (author) / Minhua, J. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 77 ; 24 - 26

    Publication date:

    2000-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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