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    The Auger transistor based on the Al-SiO2-n-Si heterostructure

    New search for: Ostroumova, E. V.
    New search for: Rogachev, A. A.

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    The Auger transistor based on the Al-SiO2-n-Si heterostructure

    New search for: Ostroumova, E. V.
    New search for: Rogachev, A. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The Auger transistor based on the Al-SiO2-n-Si heterostructure

    New search for: Ostroumova, E. V.
    New search for: Rogachev, A. A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    The Auger transistor based on the Al-SiO2-n-Si heterostructure

    Contributors:

    Ostroumova, E. V. (author) / Rogachev, A. A. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 166 ; 480-484

    Publication date:

    2000-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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