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    Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

    New search for: Yasuda, H.
    New search for: Matsukura, F.
    New search for: Ohno, Y.
    New search for: Ohno, H.

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    Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

    New search for: Yasuda, H.
    New search for: Matsukura, F.
    New search for: Ohno, Y.
    New search for: Ohno, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

    New search for: Yasuda, H.
    New search for: Matsukura, F.
    New search for: Ohno, Y.
    New search for: Ohno, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface

    Contributors:

    Yasuda, H. (author) / Matsukura, F. (author) / Ohno, Y. (author) / Ohno, H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 166 ; 413-417

    Publication date:

    2000-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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