Formation process and lattice parameter of InAs/GaAs quantum dots: Fid-Bau Portal

Formation process and lattice parameter of InAs/GaAs quantum dots

Kim, M. D. / Lee, H. S. / Lee, J. Y. / Kim, T. W. / Yoo, K. H. / Kim, G. H.

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Formation process and lattice parameter of InAs/GaAs quantum dots

Kim, M. D. / Lee, H. S. / Lee, J. Y. / Kim, T. W. / Yoo, K. H. / Kim, G. H.

Formation process and lattice parameter of InAs/GaAs quantum dots

Kim, M. D. / Lee, H. S. / Lee, J. Y. / Kim, T. W. / Yoo, K. H. / Kim, G. H.

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Document information

Title:

Formation process and lattice parameter of InAs/GaAs quantum dots

Contributors:

Kim, M. D. (author) / Lee, H. S. (author) / Lee, J. Y. (author) / Kim, T. W. (author) / Yoo, K. H. (author) / Kim, G. H. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 22 ; 1767-1770

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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