Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration: Fid-Bau Portal

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

Tseng, H. H. / Veteran, J. / Tobin, P. J. / Mogab, J. / Tsui, P. G. / Wang, V. / Khare, M. / Wang, X. W. / Ma, T. P. / Hobbs, C.

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Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

Tseng, H. H. / Veteran, J. / Tobin, P. J. / Mogab, J. / Tsui, P. G. / Wang, V. / Khare, M. / Wang, X. W. / Ma, T. P. / Hobbs, C.

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

Tseng, H. H. / Veteran, J. / Tobin, P. J. / Mogab, J. / Tsui, P. G. / Wang, V. / Khare, M. / Wang, X. W. / Ma, T. P. / Hobbs, C.

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Document information

Title:

Jet vapor deposition nitride processing and application to advanced CMOS devices for reduction of gate leakage current and boron penetration

Contributors:

Tseng, H. H. (author) / Veteran, J. (author) / Tobin, P. J. (author) / Mogab, J. (author) / Tsui, P. G. (author) / Wang, V. (author) / Khare, M. (author) / Wang, X. W. (author) / Ma, T. P. (author) / Hobbs, C. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 173-178

Publication date:

2000-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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