High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon: Fid-Bau Portal

High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Evans-Freeman, J. H. / Peaker, A. R. / Hawkins, I. D. / Kan, P. Y. / Terry, J. / Rubaldo, L. / Ahmed, M. / Watts, S. / Dobaczewski, L.

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High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Evans-Freeman, J. H. / Peaker, A. R. / Hawkins, I. D. / Kan, P. Y. / Terry, J. / Rubaldo, L. / Ahmed, M. / Watts, S. / Dobaczewski, L.

High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Evans-Freeman, J. H. / Peaker, A. R. / Hawkins, I. D. / Kan, P. Y. / Terry, J. / Rubaldo, L. / Ahmed, M. / Watts, S. / Dobaczewski, L.

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Document information

Title:

High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Contributors:

Evans-Freeman, J. H. (author) / Peaker, A. R. (author) / Hawkins, I. D. (author) / Kan, P. Y. (author) / Terry, J. (author) / Rubaldo, L. (author) / Ahmed, M. (author) / Watts, S. (author) / Dobaczewski, L. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 237-241

Publication date:

2000-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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