Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions: Fid-Bau Portal

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Schmitt, E. / Rasp, M. / Weber, A.-D. / Kolbl, M. / Eckstein, R. / Kadinski, L. / Selder, M.

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Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Schmitt, E. / Rasp, M. / Weber, A.-D. / Kolbl, M. / Eckstein, R. / Kadinski, L. / Selder, M.

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Schmitt, E. / Rasp, M. / Weber, A.-D. / Kolbl, M. / Eckstein, R. / Kadinski, L. / Selder, M.

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Document information

Title:

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Contributors:

Schmitt, E. (author) / Rasp, M. (author) / Weber, A.-D. (author) / Kolbl, M. (author) / Eckstein, R. (author) / Kadinski, L. (author) / Selder, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 15-20

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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