Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

    New search for: Mokhov, E.N.
    New search for: Nagalyuk, S.S.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

    New search for: Mokhov, E.N.
    New search for: Nagalyuk, S.S.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

    New search for: Mokhov, E.N.
    New search for: Nagalyuk, S.S.
    New search for: Lebedev, A.A.
    New search for: Davydov, S.Y.
    New search for: Ivanov, P.A.
    New search for: Levinshtein, M.E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Structural Perfection of Silicon Carbide Crystals Grown on Profiled Seeds by Sublimation Method

    Contributors:

    Mokhov, E.N. (author) / Nagalyuk, S.S. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.

    Published in:

    Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 60-64

    MATERIALS SCIENCE FORUM ; 740/742

    Publication date:

    2013-01-01

    Size:

    5 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

    Schmitt, E. / Rasp, M. / Weber, A.-D. et al. | British Library Online Contents | 2001

    Growth of silicon carbide bulk crystals by the sublimation sandwich method

    Mokhov, E. N. / Ramm, M. G. / Roenkov, A. D. et al. | British Library Online Contents | 1997

    Sublimation Growth of Bulk AlN Crystals on SiC Seeds

    Mokhov, E.N. / Wolfson, A.A. / Avdeev, A.O. et al. | British Library Online Contents | 2013

    Growth and Characterization of Silicon Carbide by Sublimation

    Wang, Y. / Wan, L. / Liu, X.P. et al. | British Library Online Contents | 2008

    Growth and Characterization of Silicon Carbide by Sublimation

    Wang, Y. / Wan, L. / Liu, X.P. et al. | British Library Online Contents | 2008

    Back to top