Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3: Fid-Bau Portal

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Amy, F. / Hwu, Y.-K. / Brylinski, C. / Soukiassian, P.

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Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Amy, F. / Hwu, Y.-K. / Brylinski, C. / Soukiassian, P.

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Amy, F. / Hwu, Y.-K. / Brylinski, C. / Soukiassian, P.

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Check availability in my library

Order at Subito €

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Document information

Title:

Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Contributors:

Amy, F. (author) / Hwu, Y.-K. (author) / Brylinski, C. (author) / Soukiassian, P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 215-218

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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