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Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
von Bardeleben, H. J. (author) / Cantin, J. L. (author) / Baranov, P. G. (author) / Mokhov, E. N. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 509-512
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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